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AP pinned PtMn spin valve read head biased for playback symmetry and magnetic stability

机译:AP固定的PtMn旋转阀读磁头有偏斜,以实现播放对称性和磁稳定性

摘要

A spin valve sensor of a read head has a platinum manganese (PtMn) pinning layer that pins a magnetic moment of an antiparallel (AP) pinned layer structure. The pinned layer structure has a first AP pinned layer exchange coupled to the pinning layer so that the magnetic moment of the first AP pinned layer is pinned in a first direction and has a second AP pinned layer that has a magnetic moment pinned in a second direction antiparallel to the first direction. A free layer structure of the spin valve sensor is located asymmetrically between first and second shield layers so that when a sense current is conducted through the sensor a net image current field is executed on the free layer structure by the shield layers. One of the AP layers is thicker than the other so that HI=HFC+HD+HIM is exerted on the free layer structure where HI is a sense current field from all conductive layers other than the free layer structure, HFC is a ferromagnetic coupling field from the second AP pinned layer, HD is a net demagnetization field from the AP pinned layer structure and HIM is a net image current field from the shield layers.
机译:读取头的自旋阀传感器具有铂锰(PtMn)钉扎层,该钉扎层钉扎反平行(AP)钉扎层结构的磁矩。被钉扎层结构具有耦合至被钉扎层的第一AP被钉扎层交换器,使得第一AP被钉扎层的磁矩沿第一方向被钉扎,并且具有第二AP被钉扎层具有第二方向被钉扎的磁矩反平行于第一个方向。自旋阀传感器的自由层结构不对称地位于第一和第二屏蔽层之间,从而当感测电流通过传感器传导时,屏蔽层在自由层结构上执行净图像电流场。一个AP层比另一个AP层厚,因此H I &等于; H FC + H D + H IM 施加在自由层结构上,其中H I 是来自自由层结构以外的所有导电层的感应电流场,H FC 是铁磁耦合来自第二个AP固定层的磁场,H D 是来自AP固定层结构的净退磁场,而H IM 是来自屏蔽层的净图像电流场。

著录项

  • 公开/公告号US6396669B1

    专利类型

  • 公开/公告日2002-05-28

    原文格式PDF

  • 申请/专利权人 INTERNATIONAL BUSINESS MACHINES CORPORATION;

    申请/专利号US20000500121

  • 发明设计人 HARDAYAL SINGH GILL;

    申请日2000-02-08

  • 分类号G11B50/39;

  • 国家 US

  • 入库时间 2022-08-22 00:47:50

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