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AP pinned spin valve read head with a negative ferromagnetic field biased for zero asymmetry

机译:具有负铁磁场偏置的AP固定自旋阀读头,零不对称

摘要

A spin valve sensor of a read head has a platinum manganese (PtMn) pinning layer that pins a magnetic moment of an antiparallel (AP) pinned layer structure. The pinned layer structure has a first AP pinned layer exchange coupled to the pinning layer so that the magnetic moment of the first AP pinned layer is pinned in a first direction and has a second AP pinned layer that has a magnetic moment pinned in a second direction antiparallel to the first direction. A free layer structure of the spin valve sensor is located asymmetrically between first and second shield layers so that when a sense current is conducted through the sensor a net image current field is executed on the free layer structure by the shield layers. For example, if the second AP pinned layer is thicker than the first AP pinned layer HI=HFC+HD+HIM is exerted on the free layer structure where HI is a sense current field from all conductive layers other than the free layer structure, HFC is a negative ferromagnetic coupling field from the second AP pinned layer, HD is a net demagnetization field from the AP pinned layer structure and HIM is a net image current field from the shield layers.
机译:读取头的自旋阀传感器具有铂锰(PtMn)钉扎层,该钉扎层钉扎反平行(AP)钉扎层结构的磁矩。被钉扎层结构具有耦合至被钉扎层的第一AP被钉扎层交换器,使得第一AP被钉扎层的磁矩沿第一方向被钉扎,并且具有第二AP被钉扎层具有第二方向被钉扎的磁矩反平行于第一个方向。自旋阀传感器的自由层结构不对称地位于第一和第二屏蔽层之间,从而当感测电流通过传感器传导时,屏蔽层在自由层结构上执行净图像电流场。例如,如果第二AP固定层比第一AP固定层厚H I 等于H FC + H D + H IM 施加在自由层结构上,其中H I 是来自自由层结构H FC 是来自第二个AP固定层的负铁磁耦合场,H D 是来自AP固定层结构的净退磁场,H IM 是净图像电流场从屏蔽层。

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