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Dielectric gap fill process that effectively reduces capacitance between narrow metal lines using HDP-CVD
Dielectric gap fill process that effectively reduces capacitance between narrow metal lines using HDP-CVD
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机译:介电间隙填充工艺可使用HDP-CVD有效降低窄金属线之间的电容
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摘要
Substrate bombardment during HDP deposition of carbon-doped silicon oxide film results in filling the gaps between metal lines with carbon-doped low k dielectric material. This leads to the placement of low k dielectric between the narrow metal lines while the films over the metal lines have higher dielectric constant due to removal of carbon from these films during ion bombardment. Films over the metal lines have properties similar to silicon dioxide and are ready for sequential integration processes.
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