Ramp-edge structured tunneling devices using ferromagnet electrodes

摘要

The fabrication of ferromagnet-insulator-ferromagnet magnetic tunneling junction devices using a ramp-edge geometry based on, e.g., (La_0.7Sr_0.3) MnO₃, ferromagnetic electrodes and a SrTiO₃ insulator is disclosed. The maximum junction magnetoresistance (JMR) as large as 23% was observed below 300 Oe at low temperatures (T100 K). These ramp-edge junctions exhibited JMR of 6% at 200 K with a field less than 100 Oe.