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Method to fabricate a strained Si CMOS structure using selective epitaxial deposition of Si after device isolation formation
Method to fabricate a strained Si CMOS structure using selective epitaxial deposition of Si after device isolation formation
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机译:在器件隔离形成之后使用硅的选择性外延沉积来制造应变Si CMOS结构的方法
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摘要
A strained Si CMOS structure is formed by steps which include forming a relaxed SiGe layer on a surface of a substrate; forming isolation regions and well implant regions in said relaxed SiGe layer; and forming a strained Si layer on said relaxed SiGe layer. These processing steps may be used in conjunction with conventional gate processing steps in forming a strained MOSFET structure.
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