A METHOD TO FABRICATE A STRAINED SI CMOS STRUCTURE USING SELECTIVE EPITAXIAL DEPOSITION OF SI AFTER DEVICE ISOLATION FORMATION

摘要

A METHOD TO FABRICATE A STRAINED Si CMOS STRUCTURE USINGSELECTIVE EPITAXATIAL DEPOSITION OF Si AFTER DEVICE ISOLATIONFORMATIONABSTRACT OF THE DISCLOSUREA strained Si CMOS structure is formed by steps which include forming a relaxed Site layer ( 12) on a surface of a substrate ( 10); forming isolation regions ( 14) and well implant regions ( 16) in said relaxed Site layer ( 12); and forming a strained Si layer (18) on said relaxed Site layer (12). These processing steps may be used in conjunction with conventional gate processing steps in forming a strained MOSFET structure.Fig. 3