Edge growth heteroepitaxy processes with reduced lattice mismatch strain between a deposited semiconductor material and a semiconductor substrate

摘要

Semiconductor devices that include mismatched lattice crystal interfaces are produced by edge growth heteroepitaxy from a crystal with a small surface area to decrease crystal mismatch strain, achieving a crystal with reduced displacement faults. Mismatched crystal lattices are also deposited on a deformable thin membrane of semiconductor material to reduce strain in growing crystal and to reduce displacement faults to achieve a monolithic crystal structure.