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Vertical interdigitated metal-insulator-metal capacitor for an integrated circuit

机译:集成电路用垂直交叉指状金属-绝缘体-金属电容器

摘要

A substantially vertical interdigitated plate capacitor, formed in interlayer dielectric material between upper and lower interconnect layers of conductors in an integrated circuit, comprising a lower plate that has at least one U-shaped portion and a horizontal portion connected to an upper edge of the U-shaped portion. The capacitor's upper plate also has at least one U-shaped portion positioned within the interior of the lower plate's U-shaped portion and a horizontal portion connected to an upper edge of each vertically extending leg. The integrated circuit incorporating the capacitor comprises a via connection having a U-shaped layer extending between the conductors of the relatively upper and relatively lower interconnect layers and is formed simultaneously with one of the U-shaped portions of the capacitor plates.
机译:在集成电路中的导体的上互连层和下互连层之间的层间介电材料中形成的基本上垂直的叉指板电容器,包括具有至少一个U形部分和连接到U的上边缘的水平部分的下板形部分。电容器的上板还具有至少一个位于下板的U形部分内部的U形部分和一个水平部分,水平部分连接到每个垂直延伸的支腿的上边缘。包含电容器的集成电路包括具有在相对上部互连层和相对下部互连层的导体之间延伸的U形层的通孔连接,并且与电容器板的U形部分之一同时形成。

著录项

  • 公开/公告号US6417535B1

    专利类型

  • 公开/公告日2002-07-09

    原文格式PDF

  • 申请/专利权人 LSI LOGIC CORPORATION;

    申请/专利号US19980219655

  • 发明设计人 KUNAL N. TARAVADE;GREGORY A. JOHNSON;

    申请日1998-12-23

  • 分类号H01L271/08;

  • 国家 US

  • 入库时间 2022-08-22 00:46:50

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