Process for artificial optical anisotropy creation in optical isotropic semicondustors crystals

摘要

The invention refers to the technology of semiconducting materials and structures and may be used in the field of manufacture of non-linear optical elements. The process includes creation of a textured region, implantation of high-energy ions at an angle of 30...90 degree onto the optical isotropic semiconductor crystal and subsequent electrochemical dissolution of the implanted region.Claims: 1Fig.: 4