SEMICONDUCTOR LASER DEVICE HAVING A HIGH CHARACTERISTIC TEMPERATURE

摘要

A semiconductor laser device includes a resonant cavity formed on a GaAssubstrate, the resonant cavity including a quantum well (QW) active layerstructurehaving a GaInNAs(Sb) well layer and a pair of barrier layers. The QW structurehas aconduction band offset energy (.DELTA.Ec) equal to or higher than 350 mini-electron-volts(meV) between the well layer and the barrier layers, and each of the barrierlayers atensile strain equal to or lower than 2.5%.