A LASER DIODE AND METHOD OF MANUFACTURE OF THE DIODE USING A SURFACE GALLIUM NITRIDE SEED

摘要

Laser diodes are fabricated by growing epitaxial layers and forming electrodesona low dislocation density GaN single crystal substrates which are produced byslicing aGaN single crystal ingot in the planes parallel to the growing direction.Threadingdislocations appearing on the surface of the GaN substrate mainly extend inparallel tothe surface. The resonator mirrors are made by natural cleavage.