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METHOD AND APPARATUS FOR ELIMINATION OF PARASITIC BIPOLAR ACTION IN COMPLEMENTARY OXIDE SEMICONDUCTOR (CMOS) SILICON ON INSULATOR (SOI) CIRCUITS
METHOD AND APPARATUS FOR ELIMINATION OF PARASITIC BIPOLAR ACTION IN COMPLEMENTARY OXIDE SEMICONDUCTOR (CMOS) SILICON ON INSULATOR (SOI) CIRCUITS
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机译:消除绝缘体(SOI)电路上互补氧化物半导体(CMOS)硅中寄生双极性作用的方法和装置
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摘要
The present invention is an apparatus and method for eliminating parasitic bipolar transistor action in a Silicon on Insulator (SOI) Metal Oxide Semiconductor (MOS) device. In accordance with the invention a SOI electronic device and an active discharging device coupled to said SOI electronic device is provided to deactivate the parasitic bipolar transistor. The parasitic bipolar transistor action is deactivated by controlling the conduction of an active discharging device, said active discharging device being coupled to said SOI device.
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