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A THEORY OF THE CHARGE MULTIPLICATION PROCESS IN AVALANCHE PHOTODIODES
A THEORY OF THE CHARGE MULTIPLICATION PROCESS IN AVALANCHE PHOTODIODES
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机译:雪崩光电二极管电荷倍增过程的理论。
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摘要
An avalanche photodiode including a multiplication layer is provided. The multiplication layer includes a well region (72, 74) and a barrier region (76, 78, 80). The well region includes a material having a higher carrier ionization probability than a material used to form the barrier region.
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