Dielectric material comprising Ta2O5 doped with TiO2 and devices employing same

摘要

Applicant has discovered that the dielectric constant of Ta₂ O₅ can be significantly enhanced by the addition of small quantities of TiO₂. Specifically, if Ta₂ O₅ is doped with more than about 3 mole percent of TiO₂ the doped material will have a dielectric constant higher than the undoped material. For example, at a ratio of 0.92 Ta₂ O₅:0.08 TiO₂, the dielectric constant is enhanced by a factor of more than three. Because both Ta and Ti are compatible with current microelectronics processing, the new dielectric can be used to make capacitors of reduced size with but minor modifications of conventional processes.