首页> 外国专利> ADDING ELECTRICAL RESISTANCE IN SERIES WITH BYPASS CAPACITORS TO ACHIEVE A DESIRED VALUE OF ELECTRICAL IMPEDANCE BETWEEN CONDUCTORS OF AN ELECTRICAL POWER DISTRIBUTION STRUCTURE

ADDING ELECTRICAL RESISTANCE IN SERIES WITH BYPASS CAPACITORS TO ACHIEVE A DESIRED VALUE OF ELECTRICAL IMPEDANCE BETWEEN CONDUCTORS OF AN ELECTRICAL POWER DISTRIBUTION STRUCTURE

机译:在具有串联电容器的系列中增加电阻,以在配电结构的导体之间获得所需的电阻值

摘要

Apparatus and methods for achieving a desired value of electrical impedance between parallel planar conductors (204,206) of an electrical power distribution structure (203) by electrically coupling multiple bypass capacitors (202) and corresponding electrical resistance elements (e.g resistive vias (218,224) in series between the planar conductors (204,206). The methods include bypass capacitor selection criteria and electrical resistance determination criteria based upon simulation results. An exemplary electrical power distribution structure (203) produced by one of the methods includes a pair of parallel planar conductors (204,206) separated by a dielectric layer, n discrete electrical capacitors (202), and n electrical resistance elements (218,224) , where n ≥2. Each of the n discrete electrical resistance elements (218,224) is coupled in series with a corresponding one of the n discrete electrical capacitors (202) between the planar conductors (204,206) . The n capacitors (202) have substantially the same capacitance C, mounted resistance Rm mounted inductance Lm, and mounted resonant frequency fm-res. The mounted resistance Rm of each of the n capacitors (202) includes an electrical resistance of the corresponding electrical resistance element (218,224). The electrical power distribution structure (203) achieves an electrical impedance Z at the resonant frequency fm-res of the capacitors (202). The mounted resistance Rm of each of the n capacitors (202) is substantially equal to (n.Z). The mounted inductance Lm of each of the n capacitors (202) is less than or equal (0.2.n.ν0.h), where ν0 is the permeability of free space, and h is a distance between the planar conductors (206,206).
机译:通过电串联耦合多个旁路电容器(202)和相应的电阻元件(例如,电阻通孔(218,224))来实现配电结构(203)的平行平面导体(204,206)之间的电阻抗期望值的设备和方法这些方法包括基于模拟结果的旁路电容器选择标准和电阻确定标准,其中一种方法产生的示例性配电结构(203)包括一对平行的平面导体(204,206)。由介电层,n个分立的电容器(202)和n个电阻元件(218,224)隔开,其中n≥2。n个分立的电阻元件(218,224)中的每一个与n个中的相应一个串联耦合平面导体(204,206)之间的分立电容器(202)。n个电容器(202) ve基本上具有相同的电容C,安装的电阻Rm,安装的电感Lm和安装的谐振频率fm-res。 n个电容器(202)中的每一个的安装电阻Rm包括对应的电阻元件(218,224)的电阻。配电结构(203)在电容器(202)的谐振频率fm-res处获得电阻抗Z。 n个电容器(202)中的每一个的安装电阻Rm基本上等于(n.Z)。 n个电容器(202)的每一个的安装电感Lm小于或等于(0.2.n.ν0.h),其中ν0是自由空间的磁导率,h是平面导体(206,206)之间的距离。

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