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ADDING ELECTRICAL RESISTANCE IN SERIES WITH BYPASS CAPACITORS TO ACHIEVE A DESIRED VALUE OF ELECTRICAL IMPEDANCE BETWEEN CONDUCTORS OF AN ELECTRICAL POWER DISTRIBUTION STRUCTURE
ADDING ELECTRICAL RESISTANCE IN SERIES WITH BYPASS CAPACITORS TO ACHIEVE A DESIRED VALUE OF ELECTRICAL IMPEDANCE BETWEEN CONDUCTORS OF AN ELECTRICAL POWER DISTRIBUTION STRUCTURE
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机译:在具有串联电容器的系列中增加电阻,以在配电结构的导体之间获得所需的电阻值
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摘要
Apparatus and methods for achieving a desired value of electrical impedance between parallel planar conductors (204,206) of an electrical power distribution structure (203) by electrically coupling multiple bypass capacitors (202) and corresponding electrical resistance elements (e.g resistive vias (218,224) in series between the planar conductors (204,206). The methods include bypass capacitor selection criteria and electrical resistance determination criteria based upon simulation results. An exemplary electrical power distribution structure (203) produced by one of the methods includes a pair of parallel planar conductors (204,206) separated by a dielectric layer, in/i discrete electrical capacitors (202), and in/i electrical resistance elements (218,224) , where in/i /=2. Each of the in/i discrete electrical resistance elements (218,224) is coupled in series with a corresponding one of the in/i discrete electrical capacitors (202) between the planar conductors (204,206) . The in/i capacitors (202) have substantially the same capacitance iC/i, mounted resistance iRm/i mounted inductance iLm/i, and mounted resonant frequency ifm-res/i. The mounted resistance iRm/i of each of the in/i capacitors (202) includes an electrical resistance of the corresponding electrical resistance element (218,224). The electrical power distribution structure (203) achieves an electrical impedance iZ/i at the resonant frequency ifm-res/i of the capacitors (202). The mounted resistance iRm/i of each of the in/i capacitors (202) is substantially equal to (in.Z/i). The mounted inductance iLm/i of each of the in/i capacitors (202) is less than or equal (0.2.in. mu 0.h/i), where i mu 0/i is the permeability of free space, and ih/i is a distance between the planar conductors (206,206).
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机译:通过电串联耦合多个旁路电容器(202)和相应的电阻元件(例如,电阻通孔(218,224))来实现配电结构(203)的平行平面导体(204,206)之间的电阻抗期望值的设备和方法这些方法包括基于模拟结果的旁路电容器选择标准和电阻确定标准,其中一种方法产生的示例性配电结构(203)包括一对平行的平面导体(204,206)。由介电层, n i>个分立电容器(202)和<i> n i>个电阻元件(218,224)隔开,其中 n i / = 2每个 n i>个分立电阻元件(218,224)与平面导体之间的相应 n i>个分立电容器(202)串联耦合。 (204,206)。 n i>个电容器(202)具有基本相同的电容 C i>,安装电阻 Rm i>安装电感 Lm i>谐振频率 fm-res i>。每个 n i>个电容器(202)的安装电阻 Rm i>包括相应电阻元件(218,224)的电阻。电力分配结构(203)在电容器(202)的谐振频率 fm-res i>处获得电阻抗 Z i>。每个 n i>个电容器(202)的安装电阻 Rm i>基本上等于( n.Z i>)。每个 n i>个电容器(202)的安装电感 Lm i>小于或等于(0.2。 n。mu 0.h i>),其中 mu 0 i>是自由空间的磁导率, h i>是平面导体之间的距离(206,206)。
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