SEMICONDUCTORS STRUCTURES USING A GROUP III-NITRIDE QUATERNARY MATERIAL SYSTEM WITH REDUCED PHASE SEPARATION AND METHOD OF FABRICATION

摘要

A group III-nitride quaternary material system and method is disclosed for use in semiconductor structures, including laser diodes, transistors, and photodetectors, which reduces or eliminates phase separation and provides increased emission efficiency. In an exemplary embodiment the semiconductor structure includes a first InGaAlN layer of a first conduction type formed substantially without phase separation, an InGaAlN active layer substantially without phase separation, and a third InGaAlN layer of an opposite conduction type formed substantially without phase separation.