首页> 外国专利> DEVICE AND METHOD FOR EVALUATING RELIABILITY OF METALLIC INTERCONNECTION AND RECORDED MEDIUM ON WHICH EVALUATION OF RELIABILITY OF METALLIC INTERCONNECTION IS RECORDED

DEVICE AND METHOD FOR EVALUATING RELIABILITY OF METALLIC INTERCONNECTION AND RECORDED MEDIUM ON WHICH EVALUATION OF RELIABILITY OF METALLIC INTERCONNECTION IS RECORDED

机译:记录评估金属互连可靠性的设备和方法,以评估金属互连和记录介质的可靠性

摘要

Estimation related to void formation and failure is performed through numerical simulation using governing parameters for EM damage in a metal interconnect. During the numerical simulation, a metal interconnect is divided into elements. Current density and temperature distributions are obtained using numerical analysis (S304). Atomic flux divergence, AFDgen, of each element and the distribution thereof are calculated (S308) by using material property constants determined in advance through acceleration testing (S306). The reduction of element volume (S312) per one calculation step in the simulation is found by multiplying (S310) the volume of each element, the length of time by one calculation step, and the atomic volume corresponding to the calculated AFDgen. Based on the reduced amount of element volume, the thickness of each element decreases (S314). The elements having a decrease in thickness show the fact that voids have formed. The numerical analysis of the current density and temperature distributions in the metal interconnect is once again performed (S304) considering the thickness of each element. Calculation is iterated. IMAGE
机译:通过使用用于金属互连中的EM损坏的控制参数的数值模拟,可以通过数值模拟执行与空洞形成和破坏相关的估计。在数值模拟过程中,金属互连分为多个元素。使用数值分析获得电流密度和温度分布(S304)。通过使用通过加速测试预先确定的材料特性常数来计算每个元素的原子通量散度AFDgen及其分布(S308)。通过将每个元素的体积,时间长度乘以一个计算步骤以及对应于所计算的AFDgen的原子体积乘以(S310),可以发现仿真中每个计算步骤的元素体积减少(S312)。基于减少的元件体积,每个元件的厚度减小(S314)。厚度减小的元件表明形成了空隙。考虑到每个元件的厚度,再次执行金属互连中的电流密度和温度分布的数值分析(S304)。计算是重复的。 <图像>

著录项

  • 公开/公告号EP1195800A4

    专利类型

  • 公开/公告日2002-10-30

    原文格式PDF

  • 申请/专利权人 JAPAN SCIENCE AND TECHNOLOGY CORPORATION;

    申请/专利号EP19990933164

  • 发明设计人 SASAGAWA KAZUHIKO;

    申请日1999-07-28

  • 分类号H01L21/3205;H01L21/00;G01R31/02;G01R31/316;

  • 国家 EP

  • 入库时间 2022-08-22 00:33:32

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