Method of spectrochemical analysis of impurity in gas

摘要

The invention electric current to start in, the change in laser light intensity in accordance with the increase of the injection current to the injection current to a semiconductor laser light emitting device as a semiconductor laser beam used by a saturated absorption spectroscopy method using a frequency-modulated semiconductor laser light value (B point) is the lower limit current value, and the increased current value to the change in the wavelength shift start to a minimum (C point) according to the injection current to the upper limit current value, the laser beam emitted from an injection current region therebetween to the samples to provide a method of measuring the absorption spectrum used. According to the method of the present invention, a trace amount of the impurity gas contained in the high sensitivity, can also improve the measurement precision.