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Ion beam assisted e-beam evaporator and Ion beam evaporator

机译:离子束辅助电子束蒸发器和离子束蒸发器

摘要

PURPOSE: A method for manufacturing a transparent ITO conductive thin film on a resin-based substrate using an ion beam assisted electron-beam vacuum evaporator is provided to simplify a manufacturing process, by forming a transparent conductive layer having surface resistance of 10 to 1000 ohm and a light transmission rate of more than 80 percent. CONSTITUTION: A resin-based substrate like PMMA, polycarbonate and polyester is based on In-O, Zn-O and Sn-O. A transparent conductive layer sheet or film having sheet resistance from 10 to 1000 ohm and a light transmission rate of 80 percent regarding an ITO film sheet is manufactured at a temperature not higher than 100 deg.C by an ion beam assisted electron-beam vacuum evaporator. A transparent ITO conductive thin film is formed on the resin-based substrate.
机译:用途:提供一种使用离子束辅助电子束真空蒸发器在树脂基基板上制造透明ITO导电薄膜的方法,以通过形成表面电阻为10到1000 ohm的透明导电层来简化制造过程透光率超过80%。组成:一种基于树脂的基材,例如PMMA,聚碳酸酯和聚酯,是基于In-O,Zn-O和Sn-O的。通过离子束辅助电子束真空蒸发器,在不高于100℃的温度下制造透明导电层片或片电阻为10-1000 ohm,透光率为80%的ITO薄膜片。 。在基于树脂的基板上形成透明的ITO导电薄膜。

著录项

  • 公开/公告号KR20020000295A

    专利类型

  • 公开/公告日2002-01-05

    原文格式PDF

  • 申请/专利权人 LEE YOUNG CHOON;

    申请/专利号KR20000034606

  • 发明设计人 LEE YOUNG CHOON;

    申请日2000-06-22

  • 分类号H01L21/203;

  • 国家 KR

  • 入库时间 2022-08-22 00:31:45

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