CVD OF INTEGRATED Ta AND TaNx FILMS FROM TITANIUM HALIDE PRECURSORS

摘要

Inorganic pentahalogen tantalum (TaX₅) High quality conformation from precursors and nitrogen Tantalum / tantalum nitride (Ta / TaN_XA chemical vapor deposition (CVD) process for depositing a bilayer film is described. The inorganic halogen tantalum precursor is tantalum pentafluoride (TaF₅), Tantalum pentachloride (TaCl₅) And tantalum pentabromide (TaBr₅)to be. TaX₅The steam is sent to the heated reaction chamber (11). The steam is supplied to the substrate 23, which is heated at 300C-500C, by supplying a process gas for depositing a Ta film and a TaN_X RTI ID = 0.0 nitrogen-containing /RTI Deposited Ta / TaN_XDouble layer films are particularly useful in integrated circuits including copper films in small aspect ratio features. The high agrnt of these films is excellent for films deposited by PVD.