Titanium oxide CVD from titanium (IV) nitrate and titanium (IV) isopropoxide: growith kinetics, film morphology and precursor specific effects

摘要

The chemical vaor deposition (CVD) of TSiO_2 frm two molecular CVD precursors, titanium (IV) isopropoxide (TTIP) and titanium (IV) nitrate (TN), is reported. The precursor deposition knetics were measured as a function of temperature, and the microstructures of the TiO_2 films were studied with scanning electron microscopy (SEM). Both precursors deposit high purity TiO_2 films on a Si(100) substrate, with anatase forming at deposition temperatures below 650 deg C and rutile forming above 700 deg C. In the flux-limited growth regime (>400 deg C for TTIP and >250 deg C for TN), film microstructure is independent of precursor, but for reaction-limited deposition, microstructure is strongly precursor specific. A simple, qualitative model is presented to rationalize these observations.