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SEMICONDUCTOR MEMORY DEVICE CAPABLE OF INDEPENDENT SELECTION OF NORMAL AND REDUNDANT MEMORY CELLS AFTER PROGRAMMING OF REDUNDANT ADDRESS
SEMICONDUCTOR MEMORY DEVICE CAPABLE OF INDEPENDENT SELECTION OF NORMAL AND REDUNDANT MEMORY CELLS AFTER PROGRAMMING OF REDUNDANT ADDRESS
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机译:冗余地址编程后能够独立选择正常和冗余存储细胞的半导体存储器
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摘要
PURPOSE: To provide a semiconductor storage in which a defective mode being potentialized can be revealed by an acceleration test, even after replacement is performed by a redundancy memory cell. CONSTITUTION: A redundancy discriminating section 1200.0 stores previously a defective memory cell address in a regular memory cell array, and selects a redundancy memory cell instead of the regular memory cell in a normal operation mode. The redundancy discriminating section 1200.0 selects a specified redundancy memory cell row in accordance with an address signal when a test mode signal TM and a redundancy control signal RAr are in an activated state. On the other hand, when a signal TM is in an activated state and a signal RAr is in a non-activated state, replacement operation of the regular memory cell and the redundancy memory cell is stopped.
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