首页> 外国专利> SEMICONDUCTOR MEMORY DEVICE CAPABLE OF INDEPENDENT SELECTION OF NORMAL AND REDUNDANT MEMORY CELLS AFTER PROGRAMMING OF REDUNDANT ADDRESS

SEMICONDUCTOR MEMORY DEVICE CAPABLE OF INDEPENDENT SELECTION OF NORMAL AND REDUNDANT MEMORY CELLS AFTER PROGRAMMING OF REDUNDANT ADDRESS

机译:冗余地址编程后能够独立选择正常和冗余存储细胞的半导体存储器

摘要

A redundancy determining unit pre-stores a defective memory cell address in a normal memory cell array, and selects a redundant memory cell instead of a normal memory cell in a normal operational mode. The redundancy determining unit selects a designated redundant memory cell row in response to an address signal when a test mode signal and a redundancy identification address signal are activated. If the test mode signal is activated whereas the redundancy identification address signal is inactivated, a replacement operation for the normal memory cell and the redundant memory cell is stopped.
机译:冗余度确定单元在正常存储单元阵列中预先存储有缺陷的存储单元地址,并且在正常操作模式下选择冗余存储单元而不是正常存储单元。当测试模式信号和冗余标识地址信号被激活时,冗余确定单元响应于地址信号选择指定的冗余存储单元行。如果测试模式信号被激活而冗余标识地址信号被激活,则正常存储单元和冗余存储单元的替换操作被停止。

著录项

  • 公开/公告号KR100405926B1

    专利类型

  • 公开/公告日2003-11-14

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20010014927

  • 发明设计人 나카오카요시토;

    申请日2001-03-22

  • 分类号G11C29/00;

  • 国家 KR

  • 入库时间 2022-08-21 22:50:33

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