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Composition Methods of Forming Low-Permittivity Film from the Composition Low-Permittivity Film and Electronic Part Having the Low-Permittivity Film

机译:由组成低介电常数薄膜和具有该低介电常数薄膜的电子零件形成低介电常数薄膜的组成方法

摘要

The present invention provides a composition comprising (a) a thermally decomposable polymer and (b) a siloxane oligomer which is uniformly dissolved in an organic solvent, (c) a thermally decomposable polymer, (b) a siloxane oligomer, And (b) are dissolved in an organic solvent; and the composition is applied to a substrate to form a composite film in which a thermally decomposable polymer and a siloxane oligomer are uniformly mixed with each other, and then the condensation reaction of the siloxane oligomer A method for forming a low-dielectric-constant film, comprising the steps of: applying the composition to a substrate to form a composite film in which a thermally decomposable polymer and a siloxane oligomer are uniformly mixed with each other; Characterized in that a first heating step of crosslinking the siloxane oligomer and a second heating step of removing the thermally decomposable polymer are carried out, Forming method, this provides an electronic device having a low dielectric constant film and the low dielectric constant film formed by a low dielectric constant film forming method.
机译:本发明提供了一种组合物,其包含(a)热分解性聚合物和(b)均匀溶解在有机溶剂中的硅氧烷低聚物,(c)热分解性聚合物,(b)硅氧烷低聚物,和(b)为溶于有机溶剂;然后将组合物施涂到基材上以形成复合膜,其中将热分解性聚合物和硅氧烷低聚物均匀地混合,然后使硅氧烷低聚物进行缩合反应。形成低介电常数膜的方法包括以下步骤:将所述组合物施涂到基材上以形成复合膜,在所述复合膜中,热分解性聚合物和硅氧烷低聚物彼此均匀混合;其特征在于,进行使硅氧烷低聚物交联的第一加热工序和去除热分解性聚合物的第二加热工序的形成方法,从而提供具有低介电常数膜和由低介电常数膜形成的低介电常数膜的电子设备。低介电常数成膜方法。

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