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ORGANOMETALLIC COPPER COMPLEX AND PREPARATION OF COPPER THIN FILM BY CVD

机译:有机铜络合物及CVD制备铜薄膜的方法

摘要

PURPOSE: Provided are an organometallic copper complex and a method for preparing a copper metal thin film on a substrate by means of Chemical Vapor Deposition(CVD). CONSTITUTION: The organometallic copper complex is represented by the formula(1a), in which each of R1 and R2 independently represents an alkyl group having 1 to 8 carbon atoms or a perfluoroalkyl group having 1 to 8 carbon atoms; R3 represents a hydrogen atom, a fluorine atom, or a perfluoroalkyl group having 1 to 8 carbon atoms; and at least one of R4 through R7 represents a group of the formula(1b): in which Ra represents a linear or branched chain alkylene group having 1 to 5 carbon atoms, each of Rb, Rc, and Rd independently represents a linear or branched chain alkyl group having 1 to 5 carbon atoms, and M is an oxygen atom or a sulfur atom, and each of the remainders independently represents a hydrogen atom or a linear or branched chain alkyl group having 1 to 8 carbon atoms.
机译:目的:提供有机金属铜配合物和通过化学气相沉积(CVD)在基板上制备铜金属薄膜的方法。组成:有机金属铜配合物由式(1a)表示,其中R 1和R 2各自独立地表示具有1至8个碳原子的烷基或具有1至8个碳原子的全氟烷基; R 3表示氢原子,氟原子或碳数1〜8的全氟烷基。 R4至R7中的至少一个表示式(1b)的基团:其中Ra表示具有1至5个碳原子的直链或支链亚烷基,Rb,Rc和Rd各自独立地表示直链或支链碳原子数为1〜5的烷基,M为氧原子或硫原子,其余分别独立地表示氢原子或碳原子数为1〜8的直链或支链烷基。

著录项

  • 公开/公告号KR20020035466A

    专利类型

  • 公开/公告日2002-05-11

    原文格式PDF

  • 申请/专利权人 UBE INDUSTRIES LTD.;

    申请/专利号KR20010068869

  • 申请日2001-11-06

  • 分类号C07F1/08;

  • 国家 KR

  • 入库时间 2022-08-22 00:31:08

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