首页>
外国专利>
ORGANOMETALLIC COPPER COMPLEX AND PREPARATION OF COPPER THIN FILM BY CVD
ORGANOMETALLIC COPPER COMPLEX AND PREPARATION OF COPPER THIN FILM BY CVD
展开▼
机译:有机铜络合物及CVD制备铜薄膜的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
PURPOSE: Provided are an organometallic copper complex and a method for preparing a copper metal thin film on a substrate by means of Chemical Vapor Deposition(CVD). CONSTITUTION: The organometallic copper complex is represented by the formula(1a), in which each of R1 and R2 independently represents an alkyl group having 1 to 8 carbon atoms or a perfluoroalkyl group having 1 to 8 carbon atoms; R3 represents a hydrogen atom, a fluorine atom, or a perfluoroalkyl group having 1 to 8 carbon atoms; and at least one of R4 through R7 represents a group of the formula(1b): in which Ra represents a linear or branched chain alkylene group having 1 to 5 carbon atoms, each of Rb, Rc, and Rd independently represents a linear or branched chain alkyl group having 1 to 5 carbon atoms, and M is an oxygen atom or a sulfur atom, and each of the remainders independently represents a hydrogen atom or a linear or branched chain alkyl group having 1 to 8 carbon atoms.
展开▼
机译:目的:提供有机金属铜配合物和通过化学气相沉积(CVD)在基板上制备铜金属薄膜的方法。组成:有机金属铜配合物由式(1a)表示,其中R 1和R 2各自独立地表示具有1至8个碳原子的烷基或具有1至8个碳原子的全氟烷基; R 3表示氢原子,氟原子或碳数1〜8的全氟烷基。 R4至R7中的至少一个表示式(1b)的基团:其中Ra表示具有1至5个碳原子的直链或支链亚烷基,Rb,Rc和Rd各自独立地表示直链或支链碳原子数为1〜5的烷基,M为氧原子或硫原子,其余分别独立地表示氢原子或碳原子数为1〜8的直链或支链烷基。
展开▼