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Organometallic copper complex and preparation of copper thin film by cvd

机译:有机金属铜络合物及cvd制备铜薄膜

摘要

An organometallic copper complex having the following formula is favorably employable for preparing copper metal film by chemical vapor deposition: [R1 and R2 each is alkyl or perfluoroalkyl; R3 is hydrogen, fluorine, or perfluoroalkyl; and at least one of R4-R7 is a group having the formula: (in which Ra is alkylene, Rb, Rc, and Rd each is alkyl group, and M is oxygen or sulfur, and each of the remainders is hydrogen or alkyl)].
机译:具有下式的有机金属铜配合物可有利地用于通过化学气相沉积制备铜金属膜:<图像文件=“ 80000001.GIF” he =“ 28” imgContent =“ chem” imgFormat =“ GIF” inline =“ no” orientation =“ portrait” wi =“ 59” /> [R 1 和R 2 分别为烷基或全氟烷基; R 3 是氢,氟或全氟烷基; R 4 -R 7 中的至少一个是具有以下公式的组:(其中R a 是亚烷基,R b ,R c 和R d 分别为烷基,M为氧或硫, 其余各为氢或烷基)]。

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