TFT and Method for Fabricating the Same and Active Matrix display device and Method for fabricating the Same using the TFT

摘要

PURPOSE: A TFT and a method for fabricating the same, and an active matrix type display device using the TFT and a method for fabricating the same are provided to reduce the required mask by making source/drain areas directly contact source/drain electrodes, thereby simplifying the fabrication procedure at a low cost. CONSTITUTION: A method for fabricating a TFT includes the steps of forming a semiconductor layer(33) using a first mask on an insulating substrate, forming a gate insulating film on the insulating substrate including the semiconductor layer, forming a gate(37) with a gate capping layer(38) thereon by using a second mask on the gate insulating film on the semiconductor layer, forming spacers to side walls of the gates simultaneously exposing the semiconductor layer, forming high density source/drain areas(44-1,44-2) by ion-implanting of high density impurities into the exposed semiconductor layer, and forming source/drain electrodes(46-1,46-2) directly contacting the high density source/drain areas by using a third mask.