首页> 外国专利> REVERSE POWER CONTROL METHOD OF MOBILE COMMUNICATION SYSTEM APPLIED VARIABLE VALUE

REVERSE POWER CONTROL METHOD OF MOBILE COMMUNICATION SYSTEM APPLIED VARIABLE VALUE

机译:应用变量的移动通信系统逆功率控制方法

摘要

PURPOSE: A method for controlling reverse power using variables in a mobile system is provided to rapidly and exactly execute reverse power control in a fast fading environment by applying 4 variables, or power control bits of '11', '10', '01', and '00', and increasing or decreasing the transmit power of a mobile station by +1dB or -1dB. CONSTITUTION: A base station sets up a reference SNR(Signal to Noise Ratio) to compare with the SNR of a received signal in order to effectively carry out reverse power control(S1). The base station receives a signal through a reverse traffic channel from a mobile station every 1.25ms and calculates the SNR of the received signal(S2). The base station compares the reference SNR with the calculated SNR of the received signal(S3). In case that the calculated SNR is larger than the reference SNR, the base station judges whether the calculated SNR is consecutively larger than the reference SNR(S4). If the calculated SNR is consecutively larger than the reference SNR, the base station transmits a power control bit of '11' among 4 variables to the mobile station through a forward traffic channel(S5). However, in case that the calculated SNR is not consecutively larger than the reference SNR, the base station transmits a power control bit of '10' among 4 variables to the mobile station(S6).
机译:目的:提供一种在移动系统中使用变量控制反向功率的方法,以通过应用4个变量或功率控制位“ 11”,“ 10”,“ 01”在快速衰落环境中快速准确地执行反向功率控制。 ,“ 00”,并将移动站的发射功率增加或减少+ 1dB或-1dB。组成:一个基站设置一个参考SNR(信噪比)与接收信号的SNR进行比较,以便有效地进行反向功率控制(S1)。基站每1.25ms通过反向业务信道从移动站接收信号,并计算接收信号的SNR(S2)。基站将参考SNR与计算出的接收信号的SNR进行比较(S3)。在所计算的SNR大于参考SN​​R的情况下,基站判断所计算的SNR是否连续地大于参考SN​​R(S4)。如果计算出的SNR连续大于参考SN​​R,则基站通过前向业务信道向移动站发送4个变量中的功率控制比特“ 11”(S5)。然而,在计算出的SNR不连续大于参考SN​​R的情况下,基站将4个变量之中的功率控制比特“ 10”发送到移动站(S6)。

著录项

  • 公开/公告号KR20020078064A

    专利类型

  • 公开/公告日2002-10-18

    原文格式PDF

  • 申请/专利权人 HYNIX SEMICONDUCTOR INC.;

    申请/专利号KR20010017919

  • 发明设计人 LEE JEONG HAN;

    申请日2001-04-04

  • 分类号H04B7/26;

  • 国家 KR

  • 入库时间 2022-08-22 00:30:16

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