Electronic Components With Doped Metal Oxide Dielectric Materials And A Process For Making Electronic Components With Doped Metal Oxide Dielectric Materials

摘要

It made of such a material and a doped metal oxide dielectric materials to electronic devices is disclosed. The metal oxide is a group III or group V metal oxides: a (for example, Al2O3, Y2O3, Ta2O5, or V2O5), and then the metal dopant is a group IV material (Zr, Si, Ti, Hf). Metal oxide and about 0.1 weight percent of 30 weight percent comprises a dopant. The metal oxide doped dielectric of the present invention can be used in many other electronic devices and apparatus. For example, a doped metal oxide dielectric is used as a gate dielectric for the MOS device. The metal oxide doped dielectric is also used as an inter-poly dielectric material for the flash memory device.