ELECTRONIC COMPONENT WITH DOPED METAL OXIDE DIELECTRIC MATERIAL, AND PROCESS FOR MANUFACTURING ELECTRONIC COMPONENT WITH DOPED METAL OXIDE DIELECTRIC MATERIAL

摘要

PPROBLEM TO BE SOLVED: To provide an electric component with a doped metal oxide dielectric material and a manufacturing process of the electric component with the doped metal oxide dielectric material. PSOLUTION: The doped metal oxide dielectric material and the electric component formed of the material are clarified. The metal oxide is a metal oxide of a group III or a group V ( for example, AlSB2/SBOSB3/SB, YSB2/SBOSB3/SB, TaSB2/SBOSB5/SBor VSB2/SBOSB5/SB), and a dopant is a group IV (Zr, Si, Ti, Hf). The metal oxide contains a dopant about 0.1-30 wt.%. The doped metal oxide dielectric is used in many different electric components and devices. For example, the doped metal oxide dielectric is used as a gate dielectric in an MOS device. The doped metal oxide dielectric is also used as an inter-poly dielectric in a flash memory device. PCOPYRIGHT: (C)2009,JPO&INPIT