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Solid State Single Crystal Growth Of BaTiO3

机译:BaTiO3的固态单晶生长

摘要

The present invention relates to a single crystal growth method of the barium titanate (BaTiO 3). The present invention, as the temperature increases in the liquid phase forming temperature above Thus, in the single crystal growth method of the barium titanate (BaTiO 3) that has two abnormal grain growth phenomenon across the primary and secondary, (a) starting the secondary abnormal grain growth the step of heat-treating at a temperature more than a small number of particles generating a second abnormality; And (b) lowering the annealing temperature below the secondary abnormal grain growth starting temperature, characterized in that comprises the step of producing a single crystal by Sikkim growth to continue only the second abnormal grain produced in the step (a). Single crystal growth method of the barium titanate (BaTiO 3) according to the present invention, since a special device may be made of a single crystal through a common heat treatment process without the need to have the advantage of producing a single crystal in bulk at a low cost. Further, the single crystal growth method of the barium titanate (BaTiO 3) according to the present invention can grow a single crystal without any limitation on the single crystal size, as well as barium titanate (BaTiO 3), it can be applied to any type taking place sheets of abnormal grain growth .
机译:本发明涉及钛酸钡(BaTiO 3)的单晶生长方法。本发明,随着温度在液相形成温度以上升高,因此,在初级和次级具有两个异常晶粒生长现象的钛酸钡(BaTiO 3),(a)在高于一个较小温度的温度下进行热处理的步骤开始了次级异常晶粒的生长产生第二异常的颗粒;并且(b)将退火温度降低到次级异常晶粒生长开始温度以下,其特征在于包括通过锡金生长来生产单晶以仅继续步骤(a)中生成的第二异常晶粒的步骤。根据本发明的钛酸钡(BaTiO 3)的单晶生长方法,因为特殊的装置可以通过常规的热处理工艺由单晶制成,而无需具有以下优点:以低成本批量生产单晶。此外,根据本发明的钛酸钡(BaTiO 3)的单晶生长方法可以生长单晶,而钛酸钡(BaTiO 3 > 3),它可以应用于任何类型的发生异常晶粒生长的薄片。

著录项

  • 公开/公告号KR100326279B1

    专利类型

  • 公开/公告日2002-03-08

    原文格式PDF

  • 申请/专利权人 NULL NULL;

    申请/专利号KR19990023660

  • 发明设计人 이호용;김재석;김도연;

    申请日1999-06-23

  • 分类号C30B15/02;

  • 国家 KR

  • 入库时间 2022-08-22 00:29:53

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