- THERMAL POST-DEPOSITION TREATMENT OF HALOGEN-DOPED FILMS TO IMPROVE FILM STABILITY AND REDUCE HALOGEN MIGRATION TO INTERCONNECT LAYERS

摘要

The present invention relates to a method for stabilizing a halogen-doped oxide film to reduce halogen atoms migrating from a halogen-doped silicon oxide film during a continuous processing step. The halogen-doped film is deposited on the substrate and then the degassing step, wherein the film is simply heated to a temperature between about 300 and 550 degrees Celsius before deposition of the diffusion barrier layer. This heat treatment step removes loosely bound halogen atoms from the halogen-doped film and this treatment is referred to as a degassing step. In a preferred version of this embodiment, the halogen-doped silicon oxide film is an FSG film degassed for between about 35 and 50 seconds.