Surface treatment method for obtaining low surface resistance and high hole concentration of P-type GaN

摘要

In order to reduce the contact resistance of the present invention, the P-GaN is treated by surface treatment such as chemical treatment with a solution based on KOH and heat treatment with grown RTA before the formation of the ohmic electrode. The present invention relates to a surface treatment process method for obtaining a low surface resistance and a high carrier concentration, wherein the chemical treatment and RTA using a solution based on KOH after activation of the P-GaN to form a contact electrode to lower the contact resistance are performed. Performing a surface treatment such as a heat treatment by the above, performing a chemical treatment with the KOH-based solution for a predetermined time, and then performing a heat treatment for a predetermined time by the RTA method at a constant temperature, and the KOH After chemical treatment with a solution based on, to maintain the composition ratio of Ga / N on the surface, And in that it comprises a constant temperature, the step of conducting heat treatment to a period of time its features.;By implementing the surface treatment process method as described above, it increases the carrier concentration, lowers the high surface resistance which is a problem when operating the device, and lowers the high driving voltage with the lowered surface resistance, thereby reducing the power consumption when driving the device. The effect is provided.