Micro Gyroscope Fabricated by Single-crystalline Silicon Micromachining Technology

摘要

The present invention relates to a micro-angerometer manufactured by a single crystal silicon micromachining technique, wherein an insulating film is formed by a process having good step coverage of the entire structure to be insulated among the micro-angerometer structures, and a conductive film having good step coverage is used on the insulating film. Forming a conductive film as a whole, using a triple layer of an insulating film / conductive film / metal film formed of a metal film formed on a portion of the conductive film using a metal having poor step coverage, and partially etching the conductive film of the triple film. The electrical insulation between the structures of the micro-angerometer is separated by the separation.;The microangular velocity meter manufactured by the single crystal silicon micromachining technique according to the present invention is an insulation method that can be applied even when the spacing between the microstructures is small and the aspect ratio is large by introducing an SBM process and an insulation process of an oxide film / polycrystalline silicon film / metal film. By using this, the capacitance of the structure is increased, resulting in a high resolution. In addition, after fabricating the microstructure, the width of the spring moving in the horizontal direction can be controlled by controlling the thickness of the polycrystalline silicon film and oxide film deposited or grown on the side of the structure in the insulation process, and the spring constant and The resonant frequency of the structure is adjustable at the process stage. As such, being able to adjust the capacitance and the mechanical properties in the middle of the process is a great advantage in increasing the yield in the mass production process. In addition, the microangular rateometer according to the present invention is a wet etching process for spring floating by causing the undercut phenomenon occurring in the silicon deep etching step due to the middle of the spring to make a hole, not only at both ends of the spring, but also in the hole formed in the middle. This has the advantage of reducing the time it takes.