LDMOS TYPE POWER DEVICE WITH POLYSILICON FIELD PLATE STRUCTURE AND METHOD FOR MANUFACTURING THEREOF

摘要

PURPOSE: A lateral double diffused MOS(LDMOS) type high-voltage power device is provided to improve the breakdown voltage of the device and to reduce its on-resistance. CONSTITUTION: After a floating region(4) and a channel region(5) are formed in an epitaxial layer of a substrate, a drain and a source are formed on the floating region and the channel region. A polysilicon gate field plate is disposed over the gate oxide such that it overlaps with a part of the floating region and the gate region. A polysilicon source field plate(11) is disposed to be electrically isolated with the polysilicon gate field plate, the polysilicon source field plate overlaps with a part of the floating region from source electrode. A polysilicon drain field plate(11a) is disposed such that it overlaps with a part of the floating region extending from the drain electrode.