The present invention relates to a single electron memory device, and provides a method of manufacturing a quantum dot and a method of manufacturing a single electronic memory device. A method for manufacturing a quantum dot of a single electron memory device according to the present invention includes the steps of forming a first insulating layer on a semiconductor layer, forming a second insulating layer on the insulating layer, and patterning the second insulating layer. Forming a T " shape opening to partially expose the upper surface of the first insulating layer; and implanting silicon ions into the first insulating layer through the opening by using an inclination angle ion implantation method; And thermally recrystallizing the silicon ions implanted into the first insulating layer. In addition, the method of manufacturing a single-electron memory device according to the present invention may further include removing the second insulating layer after performing the step of manufacturing the quantum dots, and using a control gate electrode having a polysilicon layer pattern on the first insulating layer. And forming a source / drain region in the semiconductor layer on both sides of the control gate electrode, and forming the first insulating film with the same size as the control gate electrode.
展开▼
