首页> 外国专利> METHOD FOR PRODUCING A FREESTANDING CVD DIAMOND FILM FREE FROM CRACK AND WARPAGE

METHOD FOR PRODUCING A FREESTANDING CVD DIAMOND FILM FREE FROM CRACK AND WARPAGE

机译:生产无裂纹和翘曲的自溶CVD金刚石膜的方法

摘要

The present invention is a method for synthesizing a diamond phase on a film by chemical vapor deposition (CVD), controlling the intrinsic stress applied to the film during synthesis, selecting an optimal substrate, and cracking And a synthetic method for producing a flat diamond free film. In particular, after depositing the diamond film to a certain thickness at a certain deposition temperature, the deposition temperature during synthesis is reduced or increased continuously or in several steps to induce compressive or tensile stress on the diamond film during synthesis, thereby compressing or tensioning the diamond film. By canceling the stress, a diamond free film free of growth cracks is produced, and a flat free film free from warpage is produced using tungsten having a high modulus of elasticity as the substrate material. According to the present invention, it is possible to effectively eliminate growth cracks generated during the conventional diamond film synthesis, and to synthesize a uniform and flat diamond film without warping the film.
机译:本发明是一种通过化学气相沉积(CVD)在膜上合成金刚石相,控制合成过程中施加于膜上的固有应力,选择最佳基材并破裂的方法以及一种用于生产无扁平金刚石的合成方法。电影。特别是,在一定的沉积温度下将金刚石膜沉积到一定的厚度后,合成过程中的沉积温度会连续不断地降低或提高,或者分几步提高,从而在合成过程中在金刚石膜上产生压缩应力或拉伸应力,从而压缩或拉伸钻石膜。通过消除应力,产生没有生长裂纹的无金刚石膜,并且使用具有高弹性模量的钨作为基材来产生没有翘曲的平坦的无膜。根据本发明,可以有效地消除在常规金刚石膜合成期间产生的生长裂纹,并且可以在不使膜翘曲的情况下合成均匀且平坦的金刚石膜。

著录项

  • 公开/公告号KR100352985B1

    专利类型

  • 公开/公告日2002-09-18

    原文格式PDF

  • 申请/专利权人 한국과학기술연구원;

    申请/专利号KR19990015647

  • 发明设计人 이재갑;백영준;은광용;

    申请日1999-04-30

  • 分类号C01B31/06;

  • 国家 KR

  • 入库时间 2022-08-22 00:29:26

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