Influence calculation of failure or breakdown signatures with regional yield data e.g. for manufacture of semiconductor devices, involves preparing yield data table containing several regional yield rates for processed wafers

摘要

An influence calculation method for failure/breakdown signatures through multiple regression with regional yield data, requires initially breaking down the total arrays of IC-devices which are present on a processed wafer by establishing several adjacent zones and then preparing a yield data table in which several yield rates of the process data are contained. Several columns are present which indicated whether relevant wafers are influenced by a given signature, or not i.e. a column for each signature. The zones of each wafer are identified as influenced by the signatures and a mean yield influence of the signature per influenced wafer is calculated, and a total yield influence of the signatures per influence yield area are obtained, in which initially the weighting of the wafer is calculated and influenced by the signature in one yield area by dividing the total number by wafers, which are influenced by the signatures.