Production of an integrated circuit comprises forming metallizing regions in a substrate, applying an intermediate layer, removing the layer to form an oxide film, and partially converting the oxide film to produce a conducting connection

摘要

Production of an integrated circuit comprises preparing a circuit substrate (1); providing a first metallizing region (10a) and a second metallizing region (10b) from a first metal in the substrate; providing an intermediate layer (15') over the metallizing regions; removing the intermediate layer by etching to form an oxide film (100') above the first metallizing region; and partially converting the oxide film to produce a conducting connection of a first metal and form a connection to the first metallizing region on the surface of the resulting structure. Conversion of the oxide film is carried out using CVD with a gas containing the first metal and a halogen. Preferred Features: The intermediate layer is structured so that it forms a connection to the second metallizing region on the surface of the resulting structure. The first metal is tungsten and the gas is WF6.