Production of a semiconductor device comprises forming either an aluminum, a tungsten or a copper foil on a base layer on a substrate, forming an aluminum, tungsten or copper pattern

摘要

Production of a semiconductor device comprises: (i) forming either an aluminum foil (6), a tungsten foil or a copper foil on a base layer (2) on a substrate (1); (ii) forming an aluminum, tungsten or copper pattern from the foil using a resist foil pattern and photolithography; and (iii) removing the resist foil using a chemical containing an organic acid or a salt of it and water and having a pH of less than 8. Preferred Features: The resist film is removed by incineration after forming the aluminum, tungsten or copper pattern and before using the chemical. A blocking layer (5, 7) is produced on at least one side of the aluminum, tungsten or copper foil before and/or after forming the foil. A conducting section (4) is produced in the base layer before forming the aluminum, tungsten or copper foil so that the pattern is formed on the conducting section to become electrically connected to it.