Support for semiconductor substrate during one-sided plasma process has base body formed with support surfaces for semiconductor substrate around outside of recess in surface of base body

摘要

The support has a base body (1) provided on its upper side with one or more support surfaces for a semiconductor substrate (5), each enclosing a recess formed in the surface of the base body, sized so that the semiconductor substrate is only supported around its peripheral edge. The hollow space defined between the base of the recess and the semiconductor substrate has a depth which is insufficient for ignition of a parasitic plasma during the one-sided plasma process.