Semiconductor storage element comprises semiconductor substrate, intermediate insulating layer, connection formed in insulating layer, lower electrode, dielectric layer formed on lower electrode, and upper electrode

摘要

Semiconductor storage element comprises; (i) a semiconductor substrate (20) with a gate electrode and source/drain transitions; (ii) an intermediate insulating layer formed on the substrate; (iii) a connection (23) formed in the insulating layer and having a diffusion barrier layer and a conducting layer; (iv) a lower electrode of a capacitor connected to the conducting layer; (v) a dielectric layer formed on the lower electrode; and (vi) an upper electrode formed on the dielectric layer. An Independent claim is also included for a process for the production of a semiconductor storage element. Preferred Features: The conducting layer is a Ru, Ir, or Pt layer. The diffusion barrier layer is a layer made of TiN, TiSiN, TiAlN, TaSiN, TaAlN, IrO2 or RuO2. A polysilicon layer is arranged between the diffusion barrier layer and the substrate.