首页>
外国专利>
A method for the production of multifunctional, monolithically - integrated circuit arrangements
A method for the production of multifunctional, monolithically - integrated circuit arrangements
展开▼
机译:一种生产多功能单片集成电路装置的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method of selective molecular beam epitaxy for fabricating monolithically integrated circuit devices on a common substrate including combinations of PIN diode devices, HBT devices, HEMT devices and MESFET devices. The method includes depositing a profile layer of one of the devices on an appropriate substrate and then depositing a first dielectric layer over the profile layer. The profile layer and the dielectric layer are then etched to define a first device profile. A second profile layer for defining a second device is then deposited over the exposed substrate. The second profile is then selectively etched to define a second device profile. This process can be extended to more than two different device types monolithically integrated on a common substrate as long as the first developed devices are robust enough to handle the temperature cycling involved with developing the subsequent devices.
展开▼