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cmos interface circuit on soi substrate and manufacturing method
cmos interface circuit on soi substrate and manufacturing method
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机译:硅基板上的cmos接口电路及其制造方法
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摘要
A CMOS circuit formed in a silicon-on-insulator (SOI) substrate includes MOSFETs having drain and body diffusions which extend through the silicon layer to the surface of the insulating layer. Each of drains of the N-channel and P-channel MOSFETs serves also as a terminal (anode or cathode) of a diode that is connected in series with the MOSFET. This structure allows the CMOS device to be fabricated as a completely symmetrical structure without adding processing steps beyond those customary in fabricating conventional CMOS devices.
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