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METHOD FOR PRODUCING A DOPED AREA IN SILICON CARBIDE AND APPLICATION TO A SCHOTTKY DIODE
METHOD FOR PRODUCING A DOPED AREA IN SILICON CARBIDE AND APPLICATION TO A SCHOTTKY DIODE
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机译:碳化硅中掺杂区的制备方法及其在肖特基二极管中的应用
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摘要
The invention concerns a method for making a vertical Schottky diode on a highly doped N-type silicon carbide substrate (1), comprising steps which consist in forming an N-type lightly doped epitaxial layer (2); etching out a peripheral trench at the active zone of the diode; forming a type P doped epitaxial layer; carrying out a planarization process so that a ring (6) of the P type epitaxial layer remains in the trench; forming an insulating layer (3) on the outer periphery of the component, said insulating layer partly covering said ring; and depositing a metal (4) capable of forming a Schottky barrier with the N type epitaxial layer.
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