Monolithic it is produced from the silicon carbide the vertical type connecting type field-effect transistor and the Schottky barrier diode, and the production method

摘要

The etching fill gate and the switching element which is combined with the accumulation opposite parallel Schottky barrier diode, have been stated the self adjustable vertical type connecting type field-effect transistor. The anode of the diode, in order to decrease the loss with stray inductance, is connected to the source of the transistor with device level. The SiC surface in the SBD anode territory way the power loss which it is related with the turn ON-STATE voltage of SBD is decreased is adjusted in order to achieve the Schottky barrier height which is low, by dry etching.