One-dimensional nanostructure manufacturing method, especially for nano-electronics, forming parallel atomic lines on substrate with conducting or insulating strips between them

摘要

Parallel atomic lines (4), preferably of silicon, are formed on the surface of a silicon carbide substrate (2). The silicon carbide preferably has a cubic structure and the deposition surface is a (100) surface. Material capable of being selectively absorbed between the atomic lines, but not by the lines themselves, is then deposited to create passivated (6) or conductive (8) strips of the material between the lines. The deposited material may be hydrogen, oxygen,or any other molecule enabling passivation of the underlying surface, e.g. NO, N2O, N2, NH3, or sulfur. To produce conductive strips a metal may be chosen from the groups of alkaline or transition metals. An Independent claim is included for nanostructures produced using the method.