Field-effect device for high-speed composite p-channel Si / SiGe heterostructure

摘要

PROBLEM TO BE SOLVED: To make applicable the structure of an epitaxial field effect transistor to the intended uses of high-speed low-noise microwave and quasi-millimetric- wave devices, etc., by integrating into the epitaxial field effect transistor a silicon layer, a germanium layer, and silicon-germanium layers which form jointly a modulatorily doped heterostructure. ;SOLUTION: After forming on a single-crystal semiconductor substrate 11 a buffer layer 12 including a layer 12A, a layer 12B, and a layer 12C, a p-type doped relaxation silicon-germanium layer 13 is formed on the layer 12C of the buffer layer 12. Then, thereon, as a spacer, a non-doped strained silicon layer 14 is grown epitaxially to grow further on the layer 14 epitaxially a non-doped thin relaxation silicon-germanium layer 15. Subsequently, on the layer 15, there are grown epitaxially in succession a germanium layer 16, a silicon-germanium layer 17, and a silicon-germanium cap layer 18 to form the laminated layer of them.;COPYRIGHT: (C)2000,JPO