Semiconductor device and its manufacturing method, and non-destructive inspection method and non-destructive inspection equipment for non-destructive inspection

摘要

PROBLEM TO BE SOLVED: To detect a short defect while no electrical connection is required. ;SOLUTION: A thermo-electromotive force generating structure 21 is formed in a semiconductor device wafer 40. The thermo-electromotive force generating structure 21 is connected to first layer wirings 34a and 34b which are to be inspected. If a short defect 42 is present between the wirings, a thermo- electromotive force developed when the thermo-electromotive force generating structure 21 is irradiated with a laser beam 3 allows a current to flow through the short defect 42. The magnetic field induced by the current is detected with a magnetic field detector, and the detection result is, for example, displayed in brightness on an image display device corresponding to scanning of the laser beam 3, providing a scan magnetic field image. A laser scan microscope image from a reflection light is provided at the same time, or sequentially, with the scanning of the laser beam 3, with two images displayed superimposed. From this picture, the position of the short defect 42 is specified.;COPYRIGHT: (C)2000,JPO